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Dependence of Modulation Amplitude on Electron Density in Unidirectional Lateral Superlattices: The Effect of the Thickness of the Two-dimensional Electron Gas

机译:调制幅度对单向电子密度的依赖性   横向超晶格:二维厚度的影响   电子气

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摘要

The amplitude V_0 of unidirectional periodic potential modulation introducedby a surface grating into a two-dimensional electron gas (2DEG) formed atAlGaAs/GaAs heterointerface is measured as a function of electron density n_eby analyzing commensurability oscillation of the magnetoresistance. Theelectron density is varied either by applying a bias to a metallic back gate orby illumination. The amplitude decreases with increasing density, with the rate|dV_0/dn_e| roughly an order of magnitude larger for the former method. Theresult is interpreted in terms of the rate, dE_1/d(delta E_c), of the change inthe first subband level E_1 in response to the variation of the conduction-bandedge delta E_c above the heterointerface. The rate crucially depends on thethickness of the 2DEG.
机译:通过分析磁阻的可比性振荡,测量了由表面光栅引入形成在AlGaAs / GaAs异质界面上的二维电子气(2DEG)中的单向周期性电势的幅度V_0作为电子密度n_e的函数。通过向金属背栅施加偏压或通过照射来改变电子密度。幅度随密度增加而减小,比率为| dV_0 / dn_e |。前一种方法大约大一个数量级。结果根据响应于异质界面上方的导带边ΔE_c的变化的第一子带水平E_1的变化率dE_1 / d(δE_c)来解释。该速率关键取决于2DEG的厚度。

著录项

  • 作者

    Endo, Akira; Iye, Yasuhiro;

  • 作者单位
  • 年度 2005
  • 总页数
  • 原文格式 PDF
  • 正文语种 {"code":"en","name":"English","id":9}
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